Research Interests
  • Nano-photonics, -electronics & -biosensor
  • Optoelectronics
  • Spintronics
  • Fabrication, physics, modeling, characterization and applications of novel nanoscale devices
  • Power Electronics

Research Group

Supervisor: Dr. Quazi Deen Mohd Khosru
                 Professor, Electrical and Electronic Engineering (EEE)
                 Bangladesh University of Engineering and Technology (BUET)

Ongoing Research 

Modeling of Monolayer WSe2 Channel MOSFET

Development of a compact transport model for Monolayer WSe2 channel MOSFET and study of effects of different physical and process parameters variation on the sub- threshold behavior of the device.

Research Experiences

Modeling and Characterization of III-V MOSFETs and QWFETs

Developed 1-D self-consistent Schrödinger-Poisson solver for high-κ/III-V hetero-structure MOSFETs and QWFETs considering wave function penetration and strain effect.

Observed transport properties by ballistic current model and electrostatic performance by capacitance-voltage characteristics and direct tunneling gate leakage current.

Investigated the effect of different process and physical parameters on the performance of III-V MOSFETs and QWFETs.


Ananlytical Modeling and Simulation Study of Flexible FET

Proposed an explicit analytical model of threshold voltage for fully-depleted silicon-on-insulator double gate Flexible Field Effect Transistor by solving 2-D Poisson equation with appropriate boundary conditions, incorporating Young's parabolic approximation.

Observed threshold voltage variation of the device with several device parameters.

Obtained capacitance-voltage and ballistic current-voltage characteristics of 
double gate silicon-on-insulator Flexible Field Effect Transistor by self-consistent method using coupled Schrödinger-Poisson solver taking into account the quantum mechanical effects.

Compact Modeling of Eigen Energies and Wave Functions for Quantum Well Devices 

Proposed a physically based analytical compact model to calculate eigen energies and wave functions incorporating penetration effect applicable for both silicon and III-V based quantum well structures.

Performed validation of the model with the numerical simulations.

2-D Modeling of NC-SG-SOI-FET

Proposed a low subthreshold swing silicon based novel transistor architecture called Negative Capacitance Single Gate Silicon-On-Insulator Tunneling Field Effect Transistor (NC-SG-SOI-TFET).

Obtained 2-D analytical model of electrostatic potential distribution and electric field intensity by solving Poisson equation, and calculated drain current using band-to-band carrier generation rate incorporating the e
ffect of ferroelectric oxide using one-dimensional Landau formalism.

Observed superior 
performance of the device over traditional TFETs in terms of subthreshold swing and short channel effects e.g. a subthreshold swing of 11.82 mV/decade and operating voltage of 0.65 V for a drain current of 10.8 A/mm have been obtained.

Analysis of Subthreshold Behaviors of JLFETs

Proposed 2-D analytical models for Double Gate (DG) and Cylindrical Gate-All-Around (CGAA) Junctionless Field Effect Transistors (JLFETs) valid in the subthreshold regime by solving Poisson equation with appropriate boundary conditions.

Studied performance analysis of subthreshold behaviors for DG and CGAA JLFETs by using different design parameters.