Publications

Journals
  • Nadim Chowdhury, Imtiaz Ahmed, Takian Fakhrul, M. K. Alam and Quazi D.M. Khosru, "A Low Subthreshold Swing Tunneling Field Effect Transistor for Next Generation Low Power CMOS Applications", Physica E: Low-dimensional Systems and Nanostructures, vol. 74, pp. 251-257, 2015.  [doi:10.1016/j.physe.2015.07.004]

Transactions
  • Nadim Chowdhury, Imtiaz Ahmed, Zubair Al Azim, Md. Hasibul Alam, Iftikhar Ahmad Niaz and Dr. Quazi D.M. Khosru, "A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect", ECS Transactions, vol. 58, no. 16, pp. 9-15, 2014. [doi:10.1149/05816.0009ecst]
  • Imtiaz Ahmed and Quazi D. M. Khosru, “Physically Based Analytical Modeling of 2D Electrostatic Potential for Symmetric and Asymmetric Double Gate Junctionless Field Effect Transistors in Subthreshold Region”, ECS Transactions, vol. 69, no. 5, pp. 249-260, 2015. [doi:10.1149/06905.0249ecst] 
  • Imtiaz Ahmed, Sayema Chowdhury, Md. Hasibul Alam, Iftikhar Ahmad Niaz and Quazi D. M. Khosru, "Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current", ECS Transactions, vol. 72, no. 2, pp. 189-195, 2016. [doi: 10.1149/07202.0189ecst]
  • Imtiaz Ahmed and Quazi D. M. Khosru, “A Comprehensive Analytical Study of Subthreshold Swing for Cylindrical Gate-All-Around Junctionless Field Effect Transistor”, ECS Transactions, vol. 72, no. 2, pp. 109-119, 2016. [doi: 10.1149/07202.0109ecst]


International Conferences
  • Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam and Quazi D.M. Khosru, "A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET", IEEE International Conference on Electro/Information Technology (EIT), Indianapolis, USA, 6-8 May, 2012, pp. 1-4. [doi:10.1109/EIT.2012.6220737] 
  • Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed, Zubair Al Azim, Nadim Chowdhury and Quazi D.M. Khosru, "InxGa1-xSb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current", IEEE International Conference on Electro/Information Technology (EIT), Indianapolis, USA, 6-8 May, 2012, pp. 1-6. [doi:10.1109/EIT.2012.6220725]  
  • Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam, Nadim Chowdhury, Zubair Al Azim and Dr. Quazi D.M. Khosru, "Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects”, IEEE International Conference on Electronics Devices, Systems and Applications (ICEDSA), Kuala Lumpur, Malaysia, 5-6 November, 2012, pp. 75-79. [doi:10.1109/ICEDSA.2012.6507820]  
  • Zubair Al Azim, Nadim Chowdhury, Iftikhar Ahmad Niaz, Md. Hasibul Alam, Imtiaz Ahmed and Dr. Quazi D.M. Khosru, "Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects”, IEEE International Conference on Electronics Devices, Systems and Applications (ICEDSA), Kuala Lumpur, Malaysia, 5-6 November, 2012, pp. 71-74. [doi:10.1109/ICEDSA.2012.6507819]
  • Iftikhar Ahmad Niaz, Md. Hasibul Alam, Imtiaz Ahmed, Zubair Al Azim, Nadim Chowdhury and Dr. Quazi D.M. Khosru, “Physical/Process Parameter Dependence of Gate Capacitance and Ballistic Performance of InAsySb1-y Quantum Well Field Effect Transistors", IEEE International Nanoelectronics Conference (INEC), Resorts World Sentosa, Singapore, 2-4 January, 2013, pp. 389-392. [doi:10.1109/INEC.2013.6466055]
  • Nadim Chowdhury, Imtiaz Ahmed and Quazi D.M. Khosru, " Novel SPINFET: By Simultaneous Utilization of Rashba Effect, Zeeman Effect & Negative Capacitance", International Semiconductor Device Research Symposium (ISDRS), Maryland, USA, 11-13 December, 2013. [pdf]

Meeting Abstracts
  • Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed, Md. Hasibul Alam, Iftikhar Ahmad Niaz and Q.D.M. Khosru, "An Analytical Model to Determine the Quantized Energy Levels and Wave Functions for Quantum Well Devices", 224th ECS Meeting, San Francisco, California, USA, 27 October-1 November, 2013. [Abstract]
  • Imtiaz Ahmed and Quazi D. M. Khosru, “Physically Based Analytical Modeling of 2D Electrostatic Potential for Symmetric and Asymmetric Double Gate Junctionless Field Effect Transistors in Subthreshold Region”, 228th ECS Meeting, Phoenix, Arizona, USA, 11-15 October, 2015. [Abstract]
  • Imtiaz Ahmed, Sayema Chowdhury, Md. Hasibul Alam, Iftikhar Ahmad Niaz and Quazi D. M. Khosru, "Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current", 229th ECS Meeting, San Diego, California, USA, 29 May-2 June, 2016. [Abstract]
  • Imtiaz Ahmed and Quazi D. M. Khosru, “A Comprehensive Analytical Study of Subthreshold Swing for Cylindrical Gate-All-Around Junctionless Field Effect Transistor”, 229th ECS Meeting, San Diego, California, USA, 29 May-2 June, 2016. [Abstract]

Thesis
  • Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed and Dr. Quazi D.M. Khosru, "Quantum Mechanical Modeling of Antimonide Based Buried Channel Quantum Well FET and MOSFET ", Thesis for Bachelor of Science in Electrical and Electronic Engineering, 2012. [dissertation]
  • Imtiaz Ahmed and Dr. Quazi D.M. Khosru, "2-D Modeling of Subthreshold Characteristics of Symmetric and Asymmetric Double Gate Junctionless Field Effect Transistors", Thesis for Master of Science in Electrical and Electronic Engineering, 2015. [dissertation]